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Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage

M. Boudrissa 1 E. Delos Y. Cordier D. Theron Jean-Claude de Jaeger
1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
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Journal articles
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https://hal.archives-ouvertes.fr/hal-00158983
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Submitted on : Monday, July 2, 2007 - 10:28:01 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

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  • HAL Id : hal-00158983, version 1

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IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES

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M. Boudrissa, E. Delos, Y. Cordier, D. Theron, Jean-Claude de Jaeger. Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2000, 21, pp.512-514. ⟨hal-00158983⟩

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