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Communication Dans Un Congrès Année : 2000

Frequency difference generation in the terahertz region using LTG-GaAs photodetector

Gaël Mouret
Jean-Francois Lampin
P. Mounaix
  • Fonction : Auteur
F. Mollot
D. Lippens
  • Fonction : Auteur

Résumé

We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1 micrometer-thick Low Temperature Grown 200 deg C GaAs epilayer. Two TiSapphire laser beams 30 mW focused onto the device yield Terahertz radiation collimated through Silicon lens and detected by means of lock-in bolometer detection. The generated power and frequency, consistent with semiconductor and circuit time constants, are discussed in the prospects of antenna arrays and optical cavities.
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Dates et versions

hal-00158202 , version 1 (28-06-2007)

Identifiants

  • HAL Id : hal-00158202 , version 1

Citer

Emilien Peytavit, Gaël Mouret, Jean-Francois Lampin, Pascal Masselin, P. Mounaix, et al.. Frequency difference generation in the terahertz region using LTG-GaAs photodetector. International Terahertz Workshop (ITW 2000), Sep 2000, Sandbjerg, Denmark. ⟨hal-00158202⟩
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