An ultra high switching frequency step-down DC-DC converter based on gallium arsenide devices

Mamadou Gaye (1) , Sami Ajram (1) , Paul Maynadier (2) , Georges Salmer (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 Alcatel Space Industries Toulouse (FRANCE)

A 50MHz to 100MHz dc-dc power converter using Gallium Arsenide power switches is studied. GaAs Schottky rectifiers with high breakdown voltage and very small Ron x Con switching quality factor have been fabricated. A 10V to 5V (or 8V) prototype with an output power of 2.6Watts and a power efficiency of 77% has been reported.

Domaines: Sciences de l'ingénieur [physics]

Mamadou Gaye, Sami Ajram, Paul Maynadier, Georges Salmer. An ultra high switching frequency step-down DC-DC converter based on gallium arsenide devices. _, 2000, _, France. 4 pp. ⟨hal-00157875⟩