(Zr/Ti) ratio effect on RF magnetron sputtered lead titanate zirconate films

Caroline Soyer , T. Haccart , Eric Cattan , Denis Remiens

Sputtered Pb(ZrxTi1−x)O3 thin films with various (Zr/Ti) compositions ranging from 15/85 to 70/30 were grown and characterised in terms of structural and electrical properties. PZT thin films, with 0.7–0.8μm thickness, were deposited on Si/SiO2/Ti/Pt by sputtering followed by conventional annealing. The sputtering conditions were the same for all the compositions. There were no apparent differences in crystallographic orientation as a function of Zr/Ti and the films a-lattice constant evolution is not exactly identical to the one of bulk ceramics. The permittivity increases when the Zr concentration increases and decreases just after the mor-photropic composition i.e. Zr-rich films. The ferroelectric properties are very sensitive to the Zr/Ti ratio. For example, the coercive field increases when the Ti concentration in the film increases.

Mots clés: Pb(ZrxTi1−x)O3; various (Zr/Ti); rf sputtering; dielectric; ferroelectric

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]

Caroline Soyer, T. Haccart, Eric Cattan, Denis Remiens. (Zr/Ti) ratio effect on RF magnetron sputtered lead titanate zirconate films. Integrated Ferroelectrics, 2001, 35 (1-4), pp.229-238. ⟨10.1080/10584580108016904⟩. ⟨hal-00152474⟩