Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 µm Quantum Dot Laser

Cyril Paranthoen (1) , Charly Platz (1) , Gautier Moreau (2) , Nicolas Bertru (1) , Olivier Dehaese (1) , Alain Le Corre (1) , Patrice Miska (1) , Jacky Even (1) , Hervé Folliot (1) , Christophe Labbe (1) , G. Patriarche (1) , Jean-Claude Simon (2) , Slimane Loualiche (1)

1 INSA Rennes - Institut National des Sciences Appliquées - Rennes
2 Laboratoire d'Optronique

The surface morphology changes associated with the formation of InAs/InP(3 1 1)B quantum dots grown according to a proposed growth procedure (double cap) have been investigated using atomic force microscopy (AFM). We show that the deposit of an InP capping layer thinner than the highest dot, followed by the annealing under phosphorous overpressure, leads to the smoothing of the growth front. It induces a drastic reduction of the dot height and of its dispersion. Transmission electron microscopy and photoluminescence experiments show a clear correlation between the QD height and the deposited InP layer thickness. Using this modified capping growth process, a 1.55 μm emission wavelength with a narrower PL linewidth (50 meV) is achieved. Finally, we report ground state laser emission from QDs at 1.52 μm, which supports the DC process for the fabrication of QD devices emitting in the 1.5 μm range.

Mots clés: Nanostructures; Molecular beam epitaxy; Semiconducting III-V materials; Laser diodes

Domaines: Optique [physics.optics]

Cyril Paranthoen, Charly Platz, Gautier Moreau, Nicolas Bertru, Olivier Dehaese, et al.. Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 µm Quantum Dot Laser. 12th international conference on Molecular Beam Epitaxy (MBE 2002), Sep 2002, San Francisco (CA), United States. pp.230-235, ⟨10.1016/S0022-0248(02)02473-9⟩. ⟨hal-00151117⟩