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Article Dans Une Revue Integrated Ferroelectrics Année : 2002

Reactive ion beam etching effects on maskless PZT properties

Eric Cattan
Denis Remiens

Résumé

Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration voltage, gas pressure) has been investigated. We have evaluated the PZT surface damage by contact mode AFM. It appears that the roughness increases after ion bombardment, and that the grain boundary zone is preferentially etched. For some etching parameters, we have also studied electrical damage. Carrying out C(V) and hysteresis loops P(E) measurements before and after etching have evidenced these degradation. We have noted a large permittivity decrease after etching process whatever the current density and the acceleration voltage. The ferroelectric damage was illustrated by a large increase of the average coercive field.
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hal-00149624 , version 1 (18-08-2022)

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Paternité - Pas d'utilisation commerciale

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Caroline Soyer, Eric Cattan, Denis Remiens. Reactive ion beam etching effects on maskless PZT properties. Integrated Ferroelectrics, 2002, 48, pp.221-229. ⟨10.1080/10584580215465⟩. ⟨hal-00149624⟩
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