0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Electron Device Letters Année : 2002

0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer

Résumé

New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 μm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current gain cutoff frequency f T of 185 GHz is obtained. That result is the first reported for In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As TS-HEMTs on Silicon substrate.
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Dates et versions

hal-00147840 , version 1 (21-05-2007)

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Citer

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, et al.. 0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer. IEEE Electron Device Letters, 2002, 23 (2), pp.73-75. ⟨10.1109/55.981310⟩. ⟨hal-00147840⟩
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