Epitaxial growth and ferroelectric properties of (115) SrBi2Nb2O9 thin films deposited by pulsed laser deposition on epitaxial (111) Pt electrode

Jean-René Duclere (1, 2) , Maryline Guilloux-Viry (2) , V. Bouquet (2) , A. Perrin (2) , Eric Cattan (3) , Caroline Soyer (3) , Denis Remiens (3)

1 SPCTS - Science des Procédés Céramiques et de Traitements de Surface
2 LCSIM - Laboratoire de Chimie du solide et inorganique moléculaire
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on Pt(111) bottom electrode epitaxially grown by dc sputtering on sapphire(0001). Four-circle x-ray diffraction reveals the epitaxial growth of the SrBi2Nb2O9(115)/Pt(111) bilayers. The influence of the Pt bottom electrode on the growth of SrBi2Nb2O9 films is discussed in terms of atomic matching at the SrBi2Nb2O9/Pt interface. The remanent polarization is close to 6 μC/cm2, with a coercive field of 140 kV/cm. The zero-field relative permittivity is about 132 and the dielectric loss less than to 2%. The decay in remanent polarization is only 16% after 2.109 switching cycles, confirming the fatigue resistance of the film.

Domaines: Matériaux

Jean-René Duclere, Maryline Guilloux-Viry, V. Bouquet, A. Perrin, Eric Cattan, et al.. Epitaxial growth and ferroelectric properties of (115) SrBi2Nb2O9 thin films deposited by pulsed laser deposition on epitaxial (111) Pt electrode. Applied Physics Letters, 2003, 83 (26), pp.5500-5502. ⟨10.1063/1.1634387⟩. ⟨hal-00146477⟩