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Article Dans Une Revue Journal of Applied Physics Année : 2003

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

Résumé

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method, respectively) are presented and tested against a variety of experimental conditions. They are first applied to a transient enhanced diffusion experiment carried out on a structure containing several B delta-doped layers, in which the amount of diffusion of the different layers is accurately predicted. The fully coupled method is then used to simulate the diffusion of ultrashallow B-implanted profiles. This work definitely demonstrates the relevance of accurate physical defect models for the successful design of ultrashallow junctions in future generations of integrated circuits
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hal-00146393 , version 1 (27-05-2022)

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E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, et al.. Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects. Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩
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