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A new empirical non-linear model for sub-250 nm channel MOSFET

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https://hal.archives-ouvertes.fr/hal-00145981
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Submitted on : Monday, May 14, 2007 - 9:19:53 AM
Last modification on : Tuesday, October 19, 2021 - 6:37:49 PM

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  • HAL Id : hal-00145981, version 1

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A. Siligaris, G. Dambrine, D. Schreurs, F. Danneville. A new empirical non-linear model for sub-250 nm channel MOSFET. IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers, 2003, 13, pp.449-451. ⟨hal-00145981⟩

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