Prediction of transients induced by neutrons/protons in CMOS combinational logic cells

A. Hubert (1) , A. Bougerol (1) , F. Miller (1) , N. Buard (1) , Lorena Anghel (2) , T. Carriere (1) , Frédéric Wrobel (3) , R. Gaillard (4)

1 EADS, Corporate Research Center
2 TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés
3 LPES - Laboratoire de Physique Electronique des Solides, EA 1174
4 INFODUC SA

This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.

Mots clés: Monte-Carlo-method; CMOS-realization

Domaines: Micro et nanotechnologies/Microélectronique

A. Hubert, A. Bougerol, F. Miller, N. Buard, Lorena Anghel, et al.. Prediction of transients induced by neutrons/protons in CMOS combinational logic cells. 12th IEEE International On-Line Testing Symposium (IOLTS'06), 2006, Lake Como, Italy. 9 pp., ⟨10.1109/IOLTS.2006.51⟩. ⟨hal-00142517⟩