Damage annealing and dopant activation in Al ion implanted alpha-SiC

B. Canut (1) , S. Ramos (1) , J. Roger (1) , Jean-Pierre Chante (2, 3) , Marie-Laure Locatelli (2, 3) , Dominique Planson (2, 3)

1 DPM - Département de Physique des Matériaux
2 CEGELY - Centre de génie électrique de Lyon
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon

Aluminium ions were implanted at room temperature into n-type 6H-SiC single crystals. In order to obtain a quasi rectangular atom distribution over approximately 0.5 mu m, two successive implantations were performed up to a maximum energy of 320 keV and a total fluence of 1.6 x 10(15) ions cm(-2). The samples were then annealed under nitrogen in a rf furnace, allowing a temperature range from 1000 to 1800 degrees C. The recovery of the lattice disorder was followed by using Rutherford backscattering spectrometry of 2 MeV He+ ions in chanelling geometry (RBS/C), in conjunction with optical absorption measurements. The electrical behavior of the implanted material was tested by sheet resistance measurements. The unimplanted side of the target has been characterized by both RBS/C and X-ray photoelectron spectroscopy (XPS). A significant decrease of the surface stoichiometry [Si/C] has been evidenced for the highest annealing temperatures.

Mots clés: annealing temperatures; x-ray photoelectron spectroscopy; aluminium ions; SILICON-CARBIDE

Domaines: Energie électrique

B. Canut, S. Ramos, J. Roger, Jean-Pierre Chante, Marie-Laure Locatelli, et al.. Damage annealing and dopant activation in Al ion implanted alpha-SiC. Materials Science and Engineering: B, 1997, 46 (1-3), pp.267-270. ⟨10.1016/S0921-5107(96)01986-1⟩. ⟨hal-00141605⟩