Semiconducting surface reconstruction of p-type Si(100) substrates at 5K

Luis Perdigao (1) , D. Deresmes (1) , B. Grandidier (1) , M. Dubois (1) , Christophe Delerue (1) , Guy Allan (1) , Didier Stiévenard (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

We report scanning tunneling microscopy (STM) studies of the technologically important Si(100) surface that reveal at 5 K the coexistence of stable surface domains consisting of the p(2 x 1) reconstruction along with the c(4 x 2) and p(2 x 2) reconstructions. Using highly resolved tunneling spectroscopic measurements and tight binding calculations, we prove that the p(2 x 1) reconstruction is asymmetric and determine the mechanism that enables the contrast variation observed in the formation of the bias-dependent STM images for this reconstruction

Domaines: Sciences de l'ingénieur [physics]

Luis Perdigao, D. Deresmes, B. Grandidier, M. Dubois, Christophe Delerue, et al.. Semiconducting surface reconstruction of p-type Si(100) substrates at 5K. Physical Review Letters, 2004, 92, pp.216101/1-4. ⟨10.1103/PhysRevLett.92.216101⟩. ⟨hal-00141285⟩