Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Electronics Letters Année : 2004

Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements

Résumé

Mach-Zehnder type interferometer measurements are used to determine the variation of the optical index and propagation loss. Devices are fabricated in InGaAsP/InP material line and experiments are performed at 1.3 and 1.55 μm wavelength. Combining static and dynamic measurements, the carrier life-time, the effective index and loss variation against injected current and carrier density were determined.
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hal-00141174 , version 1 (12-04-2007)

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Malek Zegaoui, Joseph Harari, Jean-Pierre Vilcot, F. Mollot, Didier Decoster, et al.. Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements. Electronics Letters, 2004, 40 (16), pp.1019-1020. ⟨10.1049/el_20045539⟩. ⟨hal-00141174⟩
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