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Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

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https://hal.archives-ouvertes.fr/hal-00140977
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Submitted on : Wednesday, April 11, 2007 - 10:30:57 AM
Last modification on : Tuesday, October 19, 2021 - 6:37:49 PM

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  • HAL Id : hal-00140977, version 1

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A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, E. Dubois, et al.. Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain. Journal of Alloys and Compounds, Elsevier, 2004, 382, pp.24-28. ⟨hal-00140977⟩

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