Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs)

Emmanuel Dubois (1) , G. Larrieu

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

Emmanuel Dubois, G. Larrieu. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs). Journal of Applied Physics, 2004, 96, pp.729-737. ⟨hal-00140973⟩