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Article Dans Une Revue Superlattices and Microstructures Année : 2006

A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

Tarek Ben Salah
  • Fonction : Auteur
Hatem Garrab
  • Fonction : Auteur
Sami Ghedira
  • Fonction : Auteur
Bruno Allard
Damien Risaletto
  • Fonction : Auteur
Christophe Raynaud
  • Fonction : Auteur
Kamel Besbes
  • Fonction : Auteur
Hervé Morel

Résumé

The paper evaluates the optimal design of the low-doped base region inside power diodes and other bipolar devices. It is demonstrated theoretically that a low-doped base region of P+N-N+ diodes can provide a high breakdown voltage and an optimal on-resistance R-on. A simple, accurate and CPU timesaving approach is presented to extract an optimal value for the base region width, W-B. and its doping concentration, N-D. The paper details an analytical relation between W-B and N-D, and gives a method for quantifying the trade-off between their values for a given breakdown voltage and for obtaining the minimal on-resistance. Analytical results are confronted with experimental results for 4H-SiC- and 6H-SiC-based diodes.

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Dates et versions

hal-00140085 , version 1 (04-04-2007)

Identifiants

  • HAL Id : hal-00140085 , version 1

Citer

Tarek Ben Salah, Hatem Garrab, Sami Ghedira, Bruno Allard, Damien Risaletto, et al.. A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices. Superlattices and Microstructures, 2006, 40 (4-6), pp.580-587. ⟨hal-00140085⟩
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