Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-Gb/s applications

Mohand Achouche (1) , Vincent Magnin (2, 3) , Joseph Harari (2, 3) , David Carpentier (1) , Estelle Derouin (1) , Christophe Jany (1) , Didier Decoster (3, 4)

1 Laboratoire Opto+, Alcatel R&I Marcoussis
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 OPTO - IEMN - Optoélectronique - IEMN
4 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

This letter demonstrates an evanescently coupled p-i-n photodiode combined with a multimode diluted waveguide using a simple all 2-in InP processing that includes on-wafer mirrors etching and antireflection coating. A high responsivity of 0.81 A/W at 1.55 mum with less than 0.4-dB polarization dependence and a large -1-dB vertical alignment tolerance of 2.70 mum were achieved simultaneously with a bandwidth of 47 GHz. Stable operation for over 1000 h was obtained under bias stress and temperature at 200degC

Mots clés: Fabrication; PIN photodiodes; Indium phosphide; Mirrors; Etching; Coatings; Polarization; Bandwidth; Stress; Temperature

Domaines: Sciences de l'ingénieur [physics]

Mohand Achouche, Vincent Magnin, Joseph Harari, David Carpentier, Estelle Derouin, et al.. Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-Gb/s applications. IEEE Photonics Technology Letters, 2006, 18, pp.556-558. ⟨10.1109/LPT.2005.863990⟩. ⟨hal-00138747⟩