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TEM study of PtSi contacts layers for low Schottky barrier MOSFETs

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https://hal.archives-ouvertes.fr/hal-00138656
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Submitted on : Tuesday, March 27, 2007 - 10:23:00 AM
Last modification on : Tuesday, October 19, 2021 - 6:37:48 PM

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  • HAL Id : hal-00138656, version 1

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A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, et al.. TEM study of PtSi contacts layers for low Schottky barrier MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253, pp.274-277. ⟨hal-00138656⟩

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