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TEM characterisation of accumulation low Schottky barrier MOSFET with PtSi contacts

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https://hal.archives-ouvertes.fr/hal-00138408
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Submitted on : Monday, March 26, 2007 - 11:18:48 AM
Last modification on : Tuesday, October 19, 2021 - 6:37:48 PM

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  • HAL Id : hal-00138408, version 1

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A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, E. Dubois, et al.. TEM characterisation of accumulation low Schottky barrier MOSFET with PtSi contacts. School on Materials Science and Electron Microscopy, Microscopy of Tomorrow's Industrial Materials, 2005, Berlin, Germany. ⟨hal-00138408⟩

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