Room Temperature Lasing of InAs/GaAs Quantum Dots in the Whispering Gallery Modes of a Silica Microsphere
Résumé
We have achieved low threshold lasing of self-assembled InAs/GaAs quantum dots (QD) coupled to the evanescent wave of the high-Q whispering gallery modes (WGM) of a silica microsphere. In spite of Q-spoiling of WGM due to diffusion and refraction on the high index semiconductor sample, room temperature lasing is obtained with fewer than 10^3 QD. This result implies an efficient deconfinement of the WGM field toward the semiconductor, which is interpreted as a mode reconstruction process.
Domaines
Physique Quantique [quant-ph]
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