Room Temperature Lasing of InAs/GaAs Quantum Dots in the Whispering Gallery Modes of a Silica Microsphere

Sébastien Steiner (1) , Jean Hare (1) , Valérie Lefèvre-Seguin (1) , Jean-Michel Gérard (2)

1 LKB (Lhomond) - Laboratoire Kastler Brossel
2 NPSC - Nanophysique et Semiconducteurs

We have achieved low threshold lasing of self-assembled InAs/GaAs quantum dots (QD) coupled to the evanescent wave of the high-Q whispering gallery modes (WGM) of a silica microsphere. In spite of Q-spoiling of WGM due to diffusion and refraction on the high index semiconductor sample, room temperature lasing is obtained with fewer than 10^3 QD. This result implies an efficient deconfinement of the WGM field toward the semiconductor, which is interpreted as a mode reconstruction process.

Domaines: Physique Quantique [quant-ph]

Sébastien Steiner, Jean Hare, Valérie Lefèvre-Seguin, Jean-Michel Gérard. Room Temperature Lasing of InAs/GaAs Quantum Dots in the Whispering Gallery Modes of a Silica Microsphere. Optics Express, 2007, 15 (16), pp.10052. ⟨10.1364/OE.15.010052⟩. ⟨hal-00007682⟩