Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes

Tarek Ben Salah (1) , Cyril Buttay (1) , Bruno Allard (1) , Hervé Morel (1) , Sami Ghedira (2) , Kamel Besbes (2)

1 AMPERE - Ampère
2 Laboratoire de Microélectronique et Instrumentations [Monastir]

Commercial power diodes are optimized to feature punch–through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performances. Device datasheets do not cover this issue and a simple experimental setup is presented to assess the optimization conditions inside the diode epitaxial layer. Three commercial devices are tested and experimental results are confronted to device simulations. A good agreement is found

Mots clés: avalanche; p-type; intrinsic; n-type (P-I-N) diode; punch-through (PT); reverse-recovery

Domaines: Energie électrique; Autre

Tarek Ben Salah, Cyril Buttay, Bruno Allard, Hervé Morel, Sami Ghedira, et al.. Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes. IEEE Transactions on Power Electronics, 2007, 22 (1), pp.13-20. ⟨10.1109/TPEL.2006.886648⟩. ⟨hal-00135198⟩