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Communication Dans Un Congrès Année : 2004

Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

Javier Mateos
Tomás González

Résumé

We have developed technolow based on GaInAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-Branch Junctions (TBJs), YBranch Junctions (YBJs)). Then we present DC Characterization of TBJs to show the transition from ballistic to ohmic transport at room temperature and also experimental results for Y-Branch Junctions (YBJS).
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Dates et versions

hal-00133896 , version 1 (28-02-2007)

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Jean-Sebastien Galloo, Emmanuelle Pichonat, Yannick Roelens, S. Bollaert, X. Wallart, et al.. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures. 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩. ⟨hal-00133896⟩
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