Ballistic GaInAs/AlInAs devices technology and characterization at room temperature - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2004

Ballistic GaInAs/AlInAs devices technology and characterization at room temperature

Résumé

We have developed technology based on GaInAs/AlInAs for building ballistic devices working at room temperature. We first present here processes for passive and active devices (T-branch junctions (TBJs), Y-branch junctions (YBJs) and TBJs with Schottky gates. Then, we present DC characterization of TBJs to prove the ballistic behaviour and new results for YBJs.
Fichier non déposé

Dates et versions

hal-00133881 , version 1 (28-02-2007)

Identifiants

Citer

J.S. Galloo, Yannick Roelens, S. Bollaert, Emmanuelle Pichonat, X. Wallart, et al.. Ballistic GaInAs/AlInAs devices technology and characterization at room temperature. 4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.98-100, ⟨10.1109/NANO.2004.1392262⟩. ⟨hal-00133881⟩
47 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More