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Noise modeling in fully depleted SOI MOSFETs

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https://hal.archives-ouvertes.fr/hal-00133880
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Wednesday, February 28, 2007 - 9:50:34 AM
Last modification on : Friday, December 3, 2021 - 4:04:04 PM

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  • HAL Id : hal-00133880, version 1

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G. Pailloncy, B. Iniguez, G. Dambrine, J.P. Raskin, F. Danneville. Noise modeling in fully depleted SOI MOSFETs. Solid-State Electronics, Elsevier, 2004, 48, pp.813-825. ⟨hal-00133880⟩

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