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Design optimization of AlInAs-GaInAs HEMTs for low-noise applications

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https://hal.archives-ouvertes.fr/hal-00133870
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Submitted on : Wednesday, February 28, 2007 - 9:35:02 AM
Last modification on : Tuesday, October 19, 2021 - 6:37:48 PM

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  • HAL Id : hal-00133870, version 1

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J. Mateos, T. Gonzales, D. Pardo, S. Bollaert, T. Parenty, et al.. Design optimization of AlInAs-GaInAs HEMTs for low-noise applications. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2004, 51, pp.1228-1233. ⟨hal-00133870⟩

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