Theory of Si nanocrystals

Guy Allan (1) , Christophe Delerue (1) , Michel Lannoo (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The intense luminescence observed for porous silicon [1] has raised extremely interesting problems related to the possibility of using silicon in optoelectronics. One likely explanation is quantum confinement, induced by the formation of nanocrystallites. However, the experimental data reveal a complex situation characteristic of several radiative as well as non radiative channels. Our main aim in this chapter will thus be to review the relevant theoretical information concerning the optical properties of Si nanocrystals in order to identify these channels.

Mots clés: Porous Silicon; Local Density Approximation; Silicon Nanocrystals; Intraband Transition; Radiative Recombination Rate

Domaines: Sciences de l'ingénieur [physics]

Guy Allan, Christophe Delerue, Michel Lannoo. Theory of Si nanocrystals. PAVESI L., GAPONENKO S., and DAL NEGRO L. Towards the first silicon laser, Kluwer Academic Publishers, pp.243-260, 2003, 978-1-4020-1194-8. ⟨10.1007/978-94-010-0149-6_22⟩. ⟨hal-00131749⟩