Carbon nanotube field-effect transistor for GHz operation

Jean-Marc Bethoux (1) , Henri Happy (1) , Gilles Dambrine (1) , Jean-Sébastien Borghetti (2) , Vincent Derycke (2) , M. F. Goffman (2) , Jean-Philippe Bourgoin (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LEM - Laboratoire d'Electronique Moléculaire

The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F T of 1 GHz, with a slope of -20dB/decade, for the first time

Mots clés: CNTFETs; Carbon nanotubes; Gold; Frequency; Hafnium; Impedance; Aluminum oxide; Oxidation; Self-assembly; Coplanar transmission lines

Domaines: Sciences de l'ingénieur [physics]

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Jean-Sébastien Borghetti, Vincent Derycke, et al.. Carbon nanotube field-effect transistor for GHz operation. European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.206-209, ⟨10.1109/ESSDER.2006.307674⟩. ⟨hal-00128189⟩