Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement

Jean-Marc Bethoux (1) , H. Happy (1) , Gilles Dambrine (1) , Vincent Derycke (2) , M. F. Goffman (2) , Jean-Philippe Bourgoin (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LEM - Laboratoire d'Electronique Moléculaire

Carbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents in the mA range have been obtained. The dynamic response of the CN-FETs has been investigated through S-parameters measurements. A current gain (|H21|2) cut-off frequency (ft) of 8 GHz, and a maximum stable gain (MSG) value of 10 dB at 1 GHz have been obtained. The extraction of an equivalent circuit is proposed.

Mots clés: Carbon nanotube field-effect transistor (CN-FET); GHz; High frequency

Domaines: Sciences de l'ingénieur [physics]

Jean-Marc Bethoux, H. Happy, Gilles Dambrine, Vincent Derycke, M. F. Goffman, et al.. Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement. Materials Science and Engineering: B, 2006, 135 (3), pp.294-296. ⟨10.1016/j.mseb.2006.08.022⟩. ⟨hal-00128188⟩