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The effects of self-assembled monolayers gate dielectrics treatment on pentacene thin film transistor characteristics

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https://hal.archives-ouvertes.fr/hal-00127157
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Submitted on : Monday, January 29, 2007 - 11:37:40 AM
Last modification on : Saturday, October 9, 2021 - 3:12:44 AM

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  • HAL Id : hal-00127157, version 1

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K. Lmimouni, R. Bianchini, S. Lenfant, D. Troadec, D. Vuillaume. The effects of self-assembled monolayers gate dielectrics treatment on pentacene thin film transistor characteristics. Indo-French workshop on molecular and organic devices, 2006, Lille, France. ⟨hal-00127157⟩

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