Water exclusion at the nanometer scale provides long term passivation of silicon(111) grafted with alkyl monolayers

P. Gorostiza , C. Henry de Villeneuve , Q.Y. Sun , F. Sanz , X. Wallart (1) , Rabah Boukherroub , P. Allongue

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

P. Gorostiza, C. Henry de Villeneuve, Q.Y. Sun, F. Sanz, X. Wallart, et al.. Water exclusion at the nanometer scale provides long term passivation of silicon(111) grafted with alkyl monolayers. Journal of Physical Chemistry B, 2006, 110, pp.5576-5585. ⟨hal-00127062⟩