Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices
Colleen Marlow
(1)
,
Richard Taylor
(1)
,
Theodore P. Martin
(1)
,
B.C. Scannell
(1)
,
H. Linke
(1)
,
M.S. Fairbanks
(1)
,
Gavin D.R. Hall
(1)
,
Ivan Shorubalko
(2)
,
Lars Samuelson
(3)
,
T.M. Fromhold
(4)
,
Carl Brown
(5)
,
Benoit Hackens
(6, 7)
,
Sébastien Faniel
(6, 7)
,
Cédric Gustin
(6, 7)
,
Vincent Bayot
(6, 7)
,
X. Wallart
(8)
,
S. Bollaert
(8)
,
A. Cappy
(8)
1
University of Oregon [Eugene]
2 LU - University of Latvia
3 Skane University Hospital [Lund]
4 UON - University of Nottingham, UK
5 School of Biomedical and Natural Sciences
6 CeRMiN, Research Center in Micro and Nanoscopic Materials and Electronic Devices
7 UCL PCPM - Unité de Physico-Chimie et de Physique des Matériaux
8 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LU - University of Latvia
3 Skane University Hospital [Lund]
4 UON - University of Nottingham, UK
5 School of Biomedical and Natural Sciences
6 CeRMiN, Research Center in Micro and Nanoscopic Materials and Electronic Devices
7 UCL PCPM - Unité de Physico-Chimie et de Physique des Matériaux
8 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
Benoit Hackens
- Fonction : Auteur
- PersonId : 757583
- ORCID : 0000-0001-6121-5126
X. Wallart
- Fonction : Auteur
- PersonId : 741251
- IdHAL : xavier-wallart
- ORCID : 0000-0002-0915-0043
- IdRef : 03424879X
S. Bollaert
- Fonction : Auteur
- PersonId : 746374
- IdHAL : sylvain-bollaert
- ORCID : 0000-0002-3812-4389
- IdRef : 108875415
A. Cappy
- Fonction : Auteur
- PersonId : 9716
- IdHAL : alain-cappy
- ORCID : 0000-0002-1811-1054
- IdRef : 056754701
Résumé
We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events