Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2006

Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

Résumé

We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events
Fichier non déposé

Dates et versions

hal-00126523 , version 1 (25-01-2007)

Identifiants

Citer

Colleen Marlow, Richard Taylor, Theodore P. Martin, B.C. Scannell, H. Linke, et al.. Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.195318-1-7. ⟨10.1103/PhysRevB.73.195318⟩. ⟨hal-00126523⟩
27 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More