An 8-GHz ft carbon nanotube field-effect-transistor for gigahertz range applications

Jean-Marc Bethoux (1) , Henri Happy (1) , Gilles Dambrine (1) , Vincent Derycke (2) , M. F. Goffman (2) , Jean-Philippe Bourgoin (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LEM - Laboratoire d'Electronique Moléculaire

In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21|2) cutoff frequency (ft ) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable

Mots clés: Carbon nanotube field-effect transistor (CNFET); gigahertz; high frequency (HF)

Domaines: Sciences de l'ingénieur [physics]

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, M. F. Goffman, et al.. An 8-GHz ft carbon nanotube field-effect-transistor for gigahertz range applications. IEEE Electron Device Letters, 2006, 27 (08), pp.681-683. ⟨10.1109/LED.2006.879042⟩. ⟨hal-00126517⟩