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High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

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https://hal.archives-ouvertes.fr/hal-00126452
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Submitted on : Thursday, January 25, 2007 - 9:44:25 AM
Last modification on : Tuesday, October 19, 2021 - 6:37:47 PM

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  • HAL Id : hal-00126452, version 1
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M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, B. Boudart, et al.. High power and linearity performances of gallium nitride HEMT devices on sapphire substrate. Electronics Letters, IET, 2005, 41, pp.46-47. ⟨hal-00126452⟩

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