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Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures

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https://hal.archives-ouvertes.fr/hal-00125159
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Thursday, January 18, 2007 - 10:58:53 AM
Last modification on : Saturday, October 9, 2021 - 3:20:02 AM

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  • HAL Id : hal-00125159, version 1

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S. Pruvost, S. Delcourt, I. Telliez, M. Laurens, N.E. Bourzgui, et al.. Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2005, 26, pp.105-108. ⟨hal-00125159⟩

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