130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigation

A. Siligaris (1) , Gilles Dambrine (1) , D. Schreurs (2) , Francois Danneville (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 ESAT-TELEMIC - KU Leuven

In this brief, a nonlinear empirical model is proposed for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. It is based on an equivalent circuit approach in which the nonlinear elements are described by empirical equations. A new original method is proposed for modeling the kink effect and its frequency dispersion, occurring in floating body PD SOI MOSFETs. The model is validated through large-signal measurements, and the nonlinear properties of PD SOI transistors are studied.

Mots clés: MOSFETs; Silicon on insulator technology; Semiconductor device modeling; Equivalent circuits

Domaines: Sciences de l'ingénieur [physics]

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville. 130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigation. IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2809-2812. ⟨10.1109/TED.2005.859707⟩. ⟨hal-00125134⟩