High-Frequency response in ferroelectric BaSrTiO3 thin films studied by terahertz time-domain spectroscopy

Abstract : We have measured the dielectric properties of BaTiO3–SrTiO3 thin films, deposited on fused silica substrates, in the MHz and THz frequency regions. Different experimental Chemical Vapor Deposition parameters were analyzed to improve dielectric properties of these thin films. In particular, we clarify pressure and oxygen percentages during the deposition of the thin layer. The complex permittivity function of the film was accurately determined between 100 GHz and 1 THz. We show that the real part of the dielectric behavior at very high frequencies follows the same tendency of the low frequency dielectric behavior also measured. These results are correlated to X-ray diffraction and RBS patterns, which show that the cationic ratio (Ba+Sr)/Ti increases from about 0.6 to 0.9 as sputtering pressure changes from 1 to 5 Pa, leading to better dielectric properties.
Type de document :
Article dans une revue
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2005, 44 (7A), p. 5058-5061. 〈10.1143/JJAP.44.5058〉
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https://hal.archives-ouvertes.fr/hal-00118319
Contributeur : Stéphane Toulin <>
Soumis le : lundi 4 décembre 2006 - 18:26:42
Dernière modification le : lundi 22 janvier 2018 - 11:02:01

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Patrick Mounaix, Marc Tondusson, Laurent Sarger, Dominique Michau, Vincent Reymond, et al.. High-Frequency response in ferroelectric BaSrTiO3 thin films studied by terahertz time-domain spectroscopy. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2005, 44 (7A), p. 5058-5061. 〈10.1143/JJAP.44.5058〉. 〈hal-00118319〉

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