Surface preparation influence on the initial sages of MOCVD growth of TiO2 thin films.
Résumé
In situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS), completed by ex situ atomic force microscopy (AFM) analyses, were performed in order to compare the initial stages of MOCVD growth of TiO2 thin films on two different surface types. The first type was a silicon native oxide free hydrogen terminated surface and the second one was a silicon dioxide surface corresponding to a thin layer of 3.5 nm thick in situ thermally grown on silicon substrate. Si(100) was used as substrate, and the growths of TiO2 thin films were achieved with titanium tetraisopropoxide (TTIP) as precursor under a temperature of 675 -C, a pressure of 0.3 Pa and a deposition time of 1 h. Whatever the surface is, the deposited titanium amount was globally the same in the two cases. On the contrary, the deposit morphology was different: a covering layer composed of a SiO2 and TiO2 phases mixture on the hydrogen terminated surface, and small TiO2 clusters homogeneously spread on the SiO2 surface.