Influence of the process parameters on both the plasma and the silicon oxide film properties in an O2/HMDSO PACVD process.

M. Goujon (1) , G. Henrion (1) , T. Belmonte (1) , P. Choquet (2) , H. Michel (1)

1 LSGS - Laboratoire de science et génie des surfaces
2 ArcelorMittal Research Liège

Domaines: Physique des plasmas [physics.plasm-ph]; Science des matériaux [cond-mat.mtrl-sci]

M. Goujon, G. Henrion, T. Belmonte, P. Choquet, H. Michel. Influence of the process parameters on both the plasma and the silicon oxide film properties in an O2/HMDSO PACVD process.. ISPC 17-17th Int. Symp. Plasma Chemistry, 2005, Toronto, Canada. ⟨hal-00114822⟩