Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

Erini Sarigiannidou (1, 2) , Fabrice Wilhelm (3) , Eva Monroy (2) , Rose-Marie Galéra (4) , Edith Bellet-Amalric (2) , A. Rogalev (3) , J. Goulon (3) , Joel Cibert (4) , Henri Mariette (1)

1 LSP - Laboratoire de Spectrométrie Physique
2 DRFMC - Département de Recherche Fondamentale sur la Matière Condensée
3 ESRF - European Synchrotron Radiation Facility
4 LLN - Laboratoire Louis Néel

Intrinsic ferromagnetism in high quality wurtzite Ga0:937Mn0:063N semiconductor is unambigu- ously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism. The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by x-ray di®raction and x-ray linear dichroism. The Curie temperature of a (Ga,Mn)N sample with 6.3 % Mn is 8 K with a spontaneous magnetic moment of 2.4 Bohr magneton per Mn at 2 K.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Erini Sarigiannidou, Fabrice Wilhelm, Eva Monroy, Rose-Marie Galéra, Edith Bellet-Amalric, et al.. Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74, pp.041306. ⟨10.1103/PhysRevB.74.041306⟩. ⟨hal-00108447⟩