Bipolar Transistor stabilized with electrical insulating elements
Résumé
In a III-V semiconductor-based heterojunction bipolar transistor (HBT) having a mesa (40) on its base (30), electrically insulating elements (61), of width similar to that of the mesa, are provided in contact with the free surface of the base and in contact with the mesa side walls. Preferably, the mesa (40) is a n-GaxIn1-xP emitter mesa of about 2 mu width, the base (30) consists of p-GaxIn1-xAs and the insulating elements (61) are boron-containing GaxIn1-xP elements of about 1 mu width. Also claimed is production of the above HBT by epitaxially growing a p-doped (or n-doped) base layer between n-doped (or p-doped) emitter and collector layers, followed by using a mask for implantation of electrically insulating ions into a layer above the base layer and then using a mask of greater width for etching of the resulting insulating layer to define the insulating elements (61) on both sides of the doped semiconductor element (40).