Electrical properties of short period InAs/GaSb superlattice.

Philippe Christol (1) , L. Konczewicz (2) , Yvan Cuminal (3) , Jean-Baptiste Rodriguez (1) , André Joullié (1)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier
2 GES - Groupe d'étude des semiconducteurs
3 LASMEA - Laboratoire des sciences et matériaux pour l'électronique et d'automatique

Electrical properties in the temperature range between 80K and 300K of type-II short period InAs/GaSb superlattice (SL) photodiode are reported. Resistivity and Hall measurements have been carried out on a 300 periods unintentionally doped SL grown on semi-insulating GaAs substrate while capacitance-voltage and electrical-voltage measurements have been performed on the same SL structure elaborated on n-type GaSb substrate. Whatever the electrical investigations, the behaviour of the InAs/GaSb SL versus tem-perature exhibited a reproducible change in type of conductivity. The SL is n-type at high temperatures range with n(300K) = 6x1016cm-3 whereas it is p-type at low temperatures with p(100K) = 2x1016cm-3.

Domaines: Optique / photonique

Philippe Christol, L. Konczewicz, Yvan Cuminal, Jean-Baptiste Rodriguez, André Joullié. Electrical properties of short period InAs/GaSb superlattice.. 2006. ⟨hal-00103689v2⟩