Electrical and optical properties of InAs/InSb/GaSb superlattices for mid-infrared applications.

Philippe Christol (1) , Yvan Cuminal (1) , Jean-Baptiste Rodriguez (1) , André Joullié (1) , V.K. Kononenko (2) , A.A. Afonenko (3) , D.V. Ushakov (3)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier
2 B. I. Stepanov Institute of Physics [Minsk]
3 Belarussian State University

Binary InAs/GaSb superlattices (SLs) grown on GaSb substrates form an ideal material system for the fabrication of short-period SLs with broken-gap type-II band alignment. They can achieve effective energy gaps that are narrower than that of InAs itself, down to zero. Such narrow gaps are of great interest for the mid- (3-5µm) and long-wavelength infrared region (8-12µm) applications, as detectors [1-3], as well as emitters [4-5]. In this communication we report on some electrical and optical characterizations of InAs(N MLs) / InSb(1 ML) / GaSb(N MLs) superlattices suitable for mid-infrared applications.

Domaines: Optique / photonique

Philippe Christol, Yvan Cuminal, Jean-Baptiste Rodriguez, André Joullié, V.K. Kononenko, et al.. Electrical and optical properties of InAs/InSb/GaSb superlattices for mid-infrared applications.. 14th International Symposium nanostrucutres : Physics and Technology., Jun 2006, St Petersbourg., Russia. ⟨hal-00103333⟩