Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process

Mohamed Boufnichel (1) , Philippe Lefaucheux (2) , Said Aachboun (1) , Rémi Dussart (2) , Pierre Ranson (2)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés

Mohamed Boufnichel, Philippe Lefaucheux, Said Aachboun, Rémi Dussart, Pierre Ranson. Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process. Microelectronic Engineering, 2005, 77, pp.327-336. ⟨hal-00098398⟩