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Article Dans Une Revue Physical Review Letters Année : 2003

Superconductivity in Doped sp3 Semiconductors: The Case of the Clathrates

Résumé

We present a joint experimental and theoretical study of the superconductivity in doped silicon clathrates. The critical temperature in Ba8@Si–46 is shown to strongly decrease with applied pressure. These results are corroborated by ab initio calculations using MacMillan's formulation of the BCS theory with the electron-phonon coupling constant lambda calculated from perturbative density functional theory. Further, the study of I8@Si–46 and of gedanken pure silicon diamond and clathrate phases doped within a rigid-band approach show that the superconductivity is an intrinsic property of the sp3 silicon network. As a consequence, carbon clathrates are predicted to yield large critical temperatures with an effective electron-phonon interaction much larger than in C60.

Dates et versions

hal-00097746 , version 1 (22-09-2006)

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Citer

D. Connétable, V. Timoshevskii, B. Masenelli, J. Beille, J. Marcus, et al.. Superconductivity in Doped sp3 Semiconductors: The Case of the Clathrates. Physical Review Letters, 2003, 91, pp.247001. ⟨10.1103/PhysRevLett.91.247001⟩. ⟨hal-00097746⟩
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