Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots.

E. B. Olshanetsky (1, 2) , Vincent Thomas Francois Renard (2, 3) , Z.D. Kvon (1, 2) , J.-C. Portal (2, 3, 4) , J.-M. Hartmann (5)

1 Institute of semiconductor Physics
2 LCMI-GHMFL - Laboratoire des champs magnétiques intenses
3 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
4 IUF - Institut universitaire de France
5 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.

Mots clés: two-dimensional electron gas; antidot latice; commensurability

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

E. B. Olshanetsky, Vincent Thomas Francois Renard, Z.D. Kvon, J.-C. Portal, J.-M. Hartmann. Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots.. EPL - Europhysics Letters, 2006, 76 (4), pp.657. ⟨10.1209/epl/i2006-10320-5⟩. ⟨hal-00097094⟩