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Article Dans Une Revue Applied Physics Letters Année : 2006

Monte Carlo simulation of phonon confinement in silicon nanostructures: Application to the determination of the thermal conductivity of silicon nanowires

Résumé

The authors study the thermal conductivity of silicon nanowires by simulation of phonon motion and interactions through a dedicated Monte Carlo model. This model solves the Boltzmann transport equation, taking into account silicon acoustic mode dispersion curves and three phonon interactions (the normal and umklapp processes). The confinement, which limits the thermal conductivity in such structures, is described by diffuse reflection at lateral boundaries of the nanowire without any adjustment by a boundary collision time, which depends on a specularity factor. They compare simulation results to experimental measurements on similar nanostructures. A good agreement is achieved for almost all the considered diameters.
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Dates et versions

hal-00095750 , version 1 (18-09-2006)

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David Lacroix, Karl Joulain, Damian Terris, Denis Lemonnier. Monte Carlo simulation of phonon confinement in silicon nanostructures: Application to the determination of the thermal conductivity of silicon nanowires. Applied Physics Letters, 2006, 89, pp.103104-1/103104-3. ⟨10.1063/1.2345598⟩. ⟨hal-00095750⟩
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