HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Time Resolved Applied Electric Field Masking in Photorefractive Semiconductors

Abstract : We propose a theoretical analysis of the temporal self-focusing phenomena in the iron-doped indium phosphide (InP: Fe) semiconductor for low irradiations with continuous laser beams at infrared wavelengths for optical telecommunication applications such as optical switching and optical routing. Numerical models using two different methods based on charge transport equations are developed. The first method uses the classical finite differences scheme whereas the second method uses a novel algorithm based on Cellular Automata. Owing to the complexity of the non-linear differential system to be solved, full results are not retrieved but promising preliminary results are obtained and reviewed in this paper: they allow us to foresee that self-focusing on the millisecond time scale is possible in InP: Fe.
Document type :
Journal articles
Complete list of metadata

Contributor : Nicolas Fressengeas Connect in order to contact the contributor
Submitted on : Thursday, September 14, 2006 - 11:46:04 AM
Last modification on : Thursday, January 13, 2022 - 12:00:18 PM

Links full text



Naima Khelfaoui, Delphine Wolfersberger, Godefroy Kugel, Nicolas Fressengeas, Mathieu Chauvet. Time Resolved Applied Electric Field Masking in Photorefractive Semiconductors. Optical and Quantum Electronics, Springer Verlag, 2006, 38, pp.63-69. ⟨10.1007/s11082-006-0011-z⟩. ⟨hal-00094072⟩



Record views