Strong coupling of light with A and B excitons in GaN microcavities grown on silicon

I. R. Sellers (1) , F. Semond (1) , M. Leroux (1) , J. Massies (1) , Pierre Disseix (2) , A.-L. Henneghien (2) , Joël Leymarie (2) , Aime Vasson (2)

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 LASMEA - Laboratoire des sciences et matériaux pour l'électronique et d'automatique

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of 50 meV is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the A and B excitonic states with the photonic mode

Mots clés: GaN; microcavities; excitons; strong coupling

Domaines: Science des matériaux [cond-mat.mtrl-sci]

I. R. Sellers, F. Semond, M. Leroux, J. Massies, Pierre Disseix, et al.. Strong coupling of light with A and B excitons in GaN microcavities grown on silicon. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.033304. ⟨10.1103/physRevB.73.033304⟩. ⟨hal-00090380⟩