The interface between a polar perovskite oxide and silicon from monoatomic lines

Isabelle Devos (1) , Pierre Boulenc (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

We report a study on the interface between polar high-k materials and the Si(001)-(2X1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of metal lines followed by oxidation, whose stability against oxygen coverage is studied. Electronic structure calculations within the Density Functional Theory framework help in building the interface and understanding its bonding structure. Moreover, we computed a conduction band offset of 1.9 eV, in agreement with electronic applications requirement. The results may provide a guidance for interface processing.

Mots clés: high-k dielectrics; interface; band offset; density functional theory

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Isabelle Devos, Pierre Boulenc. The interface between a polar perovskite oxide and silicon from monoatomic lines. 2006. ⟨hal-00087421v2⟩